Sirona Valdueza Felip

Artículos

• EL AMRANI , Salima; , Sun M.; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; BRITEL , Mohammed Reda; FERRARI , Maurizio; BOUAJAJ , Adel; ."Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films". (ISSN: 0272-8842). Ceramics International. 2024

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• SUN , Michael; GÓMEZ , R.G.; DAMILANO , Bejamin; ASENSI , J. M.; NARANJO VEGA, Fernando Bernabé; VALDUEZA FELIP, Sirona; ."InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering". (ISSN: 1369-8001). Materials Science in Semiconductor Processing. 2024 , vol 176 , p. 1 - 8 .  .

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• , Sun M.; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; ."Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering". (ISSN: 0370-1972). Physica Status Solidi (B): Basic Research. 2023 , vol 260 , num 8 , p. 1 - 7 .

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• SUN HU, Michael; BLASCO CHICANO, Rodrigo; NWODO , J.; DE LA MATA , M.; MOLINA , S.I.; AJAY , A; MONROY , E.; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; ."Comparison of the Material Quality of AlxIn1-xN (x¿0&-0.50)Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering". (ISSN: 1996-1944). Materials. 2022 , vol 15 , num 20 (7373) , p. 1 - 10 .

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• , R. Blasco; NARANJO , F. B.; VALDUEZA FELIP, Sirona; ."Design of AlInN on silicon heterojunctions grown by sputtering for solar devices". (ISSN: 1567-1739). Current Applied Physics. 2020 , vol 20 , num 11 , p. 1244 - 1252 .

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• VALDUEZA FELIP, Sirona; , R. Blasco; OLEA , J.; DÍAZ-LOBO , A.; BRAÑA , A. F.; NARANJO , F. B.; ."AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering". Materials. 2020 , vol 13 , num 10 (2336) , p. 1 - 11 .

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• BLASCO CHICANO, Rodrigo; VALDUEZA FELIP, Sirona; SUN HU, Michael; NARANJO VEGA, Fernando Bernabé; ."Low-to-Mid Al Content (x=0-0.56) AlxIn1-xN Layers Deposited on Si(100) by Radio-Frequency Sputtering". (ISSN: 0370-1972). Physica Status Solidi (B): Basic Research. 2020 , vol 257 , num 4 (1900575) , p. 1 - 6 .

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• NÚÑEZ CASCAJERO, Arántzazu; BLASCO CHICANO, Rodrigo; MONTERO , Daniel; OLEA , Javier; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; ."High quality Al0.37In0.63N layers grown at low temperature (<300°C) by radio-frequency sputtering.". (ISSN: 1369-8001). Materials Science in Semiconductor Processing. 2019 , vol 100 , p. 8 - 14 .

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• BLASCO CHICANO, Rodrigo; NÚÑEZ CASCAJERO, Arántzazu; JIMÉNEZ RODRÍGUEZ, Marco; MONTERO , D; GRENET , L; OLEA , J; NARANJO VEGA, Fernando Bernabé; VALDUEZA FELIP, Sirona; ."Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering". (ISSN: 0031-8965). Physica Status Solidi (A) Applied Research. 2019 , vol 216 , num 1 , p. 1800494 -

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• NÚÑEZ CASCAJERO, Arántzazu; VALDUEZA FELIP, Sirona; MONTEAGUDO LERMA, Laura; MONROY , Eva; TAYLOR-SHAW , Elaine; MARTIN , Robert; GONZÁLEZ HERRÁEZ, Miguel; NARANJO VEGA, Fernando Bernabé; ."In¿rich AlxIn1¿xN grown by RF¿sputtering on sapphire: from closely¿packed columnar to high¿surface quality compact layers". (ISSN: 0022-3727). Journal of Physics D - Applied Physics. 2017 , vol 50 , p. 065101 -

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• NÚÑEZ CASCAJERO, Arántzazu; MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NAVÍO , Cristina; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; NARANJO VEGA, Fernando Bernabé; ."Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering". (ISSN: 0021-4922). Japanese Journal of Applied Physics. 2016 , vol 55 , num 5 , p. 05FB07-1 - 05FB07-4

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• VALDUEZA FELIP, Sirona; ."Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness". (ISSN: 0003-6951). Applied Physics Letters. 2016

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• VALDUEZA FELIP, Sirona; ."P-i-n InGaN homojunctions (10­-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm ". (ISSN: 0927-0248). Solar Energy Materials and Solar Cells. 2016

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• VALDUEZA FELIP, Sirona; ."Study of high In content AlInN deposition on p-Si (111) by rf-sputtering". (ISSN: 0021-4922). Japanese Journal of Applied Physics. 2016

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• VALDUEZA FELIP, Sirona; ."III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 mm". (ISSN: 0031-8957). Physica Status Solidi. 2015

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; NÚÑEZ CASCAJERO, Arántzazu; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: effect of the buffer layer". (ISSN: 0022-0248). Journal of Crystal Growth. 2015 , vol 434 , p. 13 - 18

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• VALDUEZA FELIP, Sirona; , Q. Li; , M. P. Chauvat; , T. Cremel; , K. Kheng; ."High-In content InGaN homojunctions synthesized by plasma-assisted molecular beam epitax: Growth conditions, strain relaxation, and In incorporation kinetics". (ISSN: 0021-8979). Journal of Applied Physics. 2014

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• VALDUEZA FELIP, Sirona; ."Effect of the quantum well thickness on the performance of InGaN photovoltaic cells". (ISSN: 0003-6951). Applied Physics Letters. 2014 , vol 105 , p. 131105 -

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• VALDUEZA FELIP, Sirona; BELLET-AMALRIC , E.; NÚÑEZ CASCAJERO, Arántzazu; WANG , Y.; CHAUVAT , M.-P.; RUTERANA , P.; POUGET , S.; LORENZ , K.; ALVES , E.; MONROY , Eva; ."High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics". (ISSN: 0021-8979). Journal of Applied Physics. 2014 , num 116 , p. 233504 -

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• VALDUEZA FELIP, Sirona; , A. Mukhtarova; , L. Grenet; , C. Bougerol; , C. Durand; , J. Eymery; ."Improved conversion efficiency of InGaN/GaN quantum-well solar cells for hybrid integration". (ISSN: 1882-0778). APPLIED PHYSICS EXPRESS. 2014 , vol 7 , p. 32301 -

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• MUKHTAROVA , Anna; VALDUEZA FELIP, Sirona; DURAND , Christophe; PAN , Qing; GRENET , Louis; PEYRADE , David; BOUGEROL , Catherine; CHIKHAOUI , Walf; EYMERY , Joël; ."InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies". (ISSN: 1610-1642). physica status solidi (c). 2013 , vol 10 , p. 350 - 354

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• VALDUEZA FELIP, Sirona; PAN , Q.; ALTAMURA , G.; PEYRADE , D.; GONZÁLEZ-POSADA , F.; ."Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells". (ISSN: 0021-4922). Japanese Journal of Applied Physics. 2013 , vol 52

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• VALDUEZA FELIP, Sirona; NÚÑEZ-CASCAJEROAND , A.; ."Two-step method for the deposition of AlN by radio frequency sputtering". (ISSN: 0040-6090). Thin Solid Films. 2013 , vol 545 , p. 149 - 153

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Two-step method for the deposition of AlN by radio-frequency sputtering". (ISSN: 0040-6090). Thin Solid Films. 2013 , num 545 , p. 149 - 153

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Waveguide saturable absorbers at 1.55 mum basedon intraband transitions in GaN/AlN QDs". (ISSN: 1094-4087). Optics Express. 2013 , vol 23 , num 21 , p. 27578 - 27586

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• VALDUEZA FELIP, Sirona; ."Waveguide saturable absorbers at 1.55 um based on intraband transitions in GaN/AlN QDs". (ISSN: 1094-4087). Optics Express. 2013 , vol 21 , p. 27578 - 27586

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• VALDUEZA FELIP, Sirona; RIGUTTI , L; NARANJO VEGA, Fernando Bernabé; RUTERANA , P; MANGENEY , J.; JULIEN , F.H.; MONROY , E.; ."Carrier localization in InN/InGaN multiple-quantum wells with high In-content". (ISSN: 0003-6951). Applied Physics Letters. 2012 , vol 101 , p. 62109 - 62109

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• FERNÁNDEZ , S; NARANJO VEGA, Fernando Bernabé; DE ABRIL , O.; VALDUEZA FELIP, Sirona; ."Development of ZnO:Al based transparent contacts deposited at low-temperature by RF magnetron sputtering on InN layers". (ISSN: 1610-1642). physica status solidi (c). 2012 , vol 9 , p. 1065 - 1069

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• VALDUEZA FELIP, Sirona; IBAÑEZ , J.; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ARTÚS , L.; NARANJO VEGA, Fernando Bernabé; ."Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer". (ISSN: 0040-6090). Thin Solid Films. 2012

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• VALDUEZA FELIP, Sirona; RIGUTTI , L.; NARANJO VEGA, Fernando Bernabé; LACROIX , B.; FERNÁNDEZ , Susana; RUTERANA , Pierre; JULIEN , F.H.; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; ."Infrared photoluminescence of high In-content InN/InGaN mulpiple-quantum-wells". (ISSN: 0031-8957). Physica Status Solidi. 2012 , vol 209 , p. 17 - 20

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• VALDUEZA FELIP, Sirona; LACROIX , B.; FERNÁNDEZ , S.; JULIEN , F.H.; GONZÁLEZ-HERRÁEZ , M.; ."Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells". physica status solidi (a). 2012 , vol 209 , p. 17 - 20

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• VALDUEZA FELIP, Sirona; MONTEAGUDO LERMA, Laura; MANGENEY , J.; GONZÁLEZ HERRÁEZ, Miguel; JULIEN , F.H.; NARANJO VEGA, Fernando Bernabé; ."Nonlinear absorption at optical telecommunication wavelengths of InN films deposited by RF sputtering". (ISSN: 1041-1135). IEEE Photonics Technology Letters. 2012

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• ESTEBAN , O.; VALDUEZA FELIP, Sirona; DÍAZ-HERRERA , N.; NAVARRETE , M.-C.; , A. González-Cano; ."High-sensitive SPR sensing with Indium Nitride as a dielectric overlay of optical fibers". (ISSN: 0925-4005). Sensors and Actuators, B: Chemical. 2011 , vol 158 , p. 372 - 376

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• ESTEBAN MARTINEZ, Óscar; NARANJO VEGA, Fernando Bernabé; DÍAZ-HERRERA , N.; VALDUEZA FELIP, Sirona; NAVARRETE , M.C.; , A. González-Cano; ."High-sensitive SPR sensing with Indium Nitride as dielectric overlay of optical fibers". (ISSN: 0925-4005). Sensors and Actuators, B: Chemical. 2011 , vol 158 , p. 372 - 376

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , L.; MONROY , E.; FERNÁNDEZ , S; ."High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering ". (ISSN: 0031-8965). Physica Status Solidi (A) Applied Research. 2011 , vol 208 , p. 65 - 69

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• ESTEBAN MARTINEZ, Óscar; NARANJO VEGA, Fernando Bernabé; DÍAZ-HERRERA , N.; VALDUEZA FELIP, Sirona; NAVARRETE , M.C.; , A. González-Cano; ."Improved performance of SPR optical fiber sensors with InN as dielectric cover ". (ISSN: 0227-786X). SPIE Proceedings. 2011 , vol 7753 , p. 7753 - 7753

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• NARANJO VEGA, Fernando Bernabé; KANDASWAMY , P.K.; VALDUEZA FELIP, Sirona; CALVO , V.; GONZÁLEZ HERRÁEZ, Miguel; MARTÍN-LÓPEZ , S.; CORREDERA , P.; MÉNDEZ , J.A.; MUTTA , G.R.; LACROIX , B.; RUTERANA , P.; MONROY , E.; ."Non-linear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths". (ISSN: 0003-6951). Applied Physics Letters. 2011 , vol 98 , p. 319020 - 319020

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• KANDASWAMY , P. K.; VALDUEZA FELIP, Sirona; CALVO , V.; MARTÍN-LÓPEZ , S.; , P. Corredera; MÉNDEZ , J.A.; MUTTA , G.R.; ."Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths". (ISSN: 0003-6951). Applied Physics Letters. 2011 , vol 98

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• FERNÁNDEZ , S; NARANJO VEGA, Fernando Bernabé; VALDUEZA FELIP, Sirona; DE ABRIL , O; ."Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology ". (ISSN: 0031-8965). Physica Status Solidi (A) Applied Research. 2010 , vol 207 , p. 1717 - 1721

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , L.; MONROY , E.; FERNÁNDEZ , S; ."Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering ". (ISSN: 0022-0248). Journal of Crystal Growth. 2010 , vol 312 , p. 2689 - 2694

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• NARANJO VEGA, Fernando Bernabé; KANDASWAMY , P.K.; VALDUEZA FELIP, Sirona; LAHOURCADE , L.; CALVO , V.; GONZÁLEZ HERRÁEZ, Miguel; MARTÍN LÓPEZ, Sonia; CORREDERA , P.; MONROY , E.; ."Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths". (ISSN: 1610-1642). physica status solidi (c). 2010 , vol 7 , num 1 , p. 100 - 103

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• VALDUEZA FELIP, Sirona; ."Performance improvement of AlN/GaN-based intersubband detectors by using quantum dots". (ISSN: 1041-1135). IEEE Photonics Technology Letters. 2010 , vol 22 , p. 1087 - 1089

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• HOFSTETTER , D.; VALDUEZA FELIP, Sirona; DI FRANCESCO , J.; BAUMANN , E.; GIORGETTA , F. R.; ."Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions". SPIE 7808. 2010 , vol 78080A , p. 1 - 8

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• NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; VALDUEZA FELIP, Sirona; FERNANDEZ , H.; SOLIS , J.; FERNÁNDEZ , S; MONROY , E.; GRANDAL , J; SÁNCHEZ-GARCÍA , M.A.; ."Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 µm". (ISSN: 0959-8324). Microelectronics Journal. 2009 , vol 40 , p. 349 - 352

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• VALDUEZA FELIP, Sirona; GRANDAL , J.; SÁNCHEZ-GARCÍA , M. A.; ."Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 ¿m". (ISSN: 0026-2692). Microelectronics. 2009 , vol 40 , p. 349 - 352

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• VALDUEZA FELIP, Sirona; ."Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths". (ISSN: 1610-1642). physica status solidi (c). 2009 , vol 7 , p. 100 - 103

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• VALDUEZA FELIP, Sirona; KEHAGIAS , T.; DIMITRAKOPULOS , G. P.; KOMNINOU , P.; ."Stranski¿Krastanow growth of (11-22)-oriented GaN/AlN quantum dots". (ISSN: 0003-6951). Applied Physics Letters. 2009 , vol 94

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; FERNANDEZ , H.; SOLIS , J.; GUILLOT , F.; MONROY , E.; NEVOU , L.; TCHERNYCHEVA , M.; JULIEN , F.H.; ."Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN-AlN Quantum Wells and Quantum Dots at 1.5 µm". (ISSN: 1041-1135). IEEE Photonics Technology Letters. 2008 , vol 20 , p. 1366 - 1368

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• VALDUEZA FELIP, Sirona; NARANJO , F. B.; FERNANDEZ , H.; SOLÍS , J.; GUILLOT , F.; NEVOU , L.; TCHERNYCHEVA , M.; ."Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 ¿m". Photonics Technology Letters, IEEE. 2008 , vol 20 , p. 1366 - 1368

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• VALDUEZA FELIP, Sirona; SÁNCHEZ-GARCÍA , M. A.; ."Novel nitride-based materials for nonlinear optical signal processing applications at 1.5 µm". IEEE Int¿l Symp. on Intelligent Signal Processing (WISP). 2007 , p. 827 - 832

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Artículos Electrónicos

No existen datos en este apartado

Congresos

• , M. Jiménez-Rodríguez; VALDUEZA FELIP, Sirona; NARANJO , F.; ."Nonlinear optical characterization of InN/InGaN MQW through Z-Scan for passive mode-locked laser sources at 1.55 ¿m". Europeo. "39th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)". "(Eslovaquia)". (06/2015 - 06/2015).

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• VALDUEZA FELIP, Sirona; ."Strain relaxation and In incorporation kinetics in high In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy". Internacional. "SPIE Photonic West". "(Estados Unidos)". (02/2015 - 02/2015).

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• VALDUEZA FELIP, Sirona; ."InGaN based solar cells". Regional. "French Atomic Energy Commission (CEA), Institute of Nanoscience and Cryogenics (INAC) - SP2M/NPSC". "(Francia)". (02/2015 - 02/2015).

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• VALDUEZA FELIP, Sirona; TAYLOR , E.; MARTIN , R. W.; ."High In content AlInN layers grown on sapphire and p silicon (111) substrates by RF sputtering". Europeo. "23rd European Workshop on Heterostructure Technology (HETECH)". "(Alemania)". (10/2014 - 10/2014).

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• NÚÑEZ CASCAJERO, Arántzazu; MONTEAGUDO LERMA, Laura; JIMÉNEZ RODRÍGUEZ, Marco; VALDUEZA FELIP, Sirona; MONROY , Eva; TAYLOR , E.; MARTIN , R. W.; GONZÁLEZ HERRÁEZ, Miguel; NARANJO VEGA, Fernando Bernabé; ."High-In content AlInN layers grown on sapphire and p-silicon (111) by RF-sputtering". Congreso. Internacional. "23rd European Workshop on Heterostructure Technology - HETECH 2014". Rauischholzhausen "(Alemania)". (12/10/2014 - 15/10/2014).

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• VALDUEZA FELIP, Sirona; ."Effect of the quantum wells thickness on the performance of InGaN QW photovoltaic cells". Internacional. "Int¿l Workshop on Nitride Semiconductors 2014 (IWN)". "(Polonia)". (08/2014 - 08/2014).

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• VALDUEZA FELIP, Sirona; JIMÉNEZ-RODRÍGUE , M.; ."Growth and Characterization of High In-content AlInN Layers Grown by Radio-Frequency Sputtering". Internacional. "Int¿l Workshop on Nitride Semiconductors 2014 (IWN)". "(Polonia)". (08/2014 - 08/2014).

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• VALDUEZA FELIP, Sirona; ALVES , E.; ."High-In-content InGaN grown by plasma-assisted MBE for solar cells: In incorporation and strain relaxation mechanisms". Internacional. "Int¿l Workshop on Nitride Semiconductors 2014 (IWN)". "(Polonia)". (08/2014 - 08/2014).

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• VALDUEZA FELIP, Sirona; ."InGaN/GaN multiple quantum well solar cells grown by MOVPE". Internacional. "Int¿l Workshop on Nitride Semiconductors 2014 (IWN)". "(Polonia)". (08/2014 - 08/2014).

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• NÚÑEZ CASCAJERO, Arántzazu; MONTEAGUDO LERMA, Laura; JIMÉNEZ RODRÍGUEZ, Marco; VALDUEZA FELIP, Sirona; MONROY , Eva; RUIZ , Ana; GONZÁLEZ HERRÁEZ, Miguel; NARANJO VEGA, Fernando Bernabé; ."Growth and Characterization of High In-content AlInN Layers Grown by Radio-Frequency Sputtering"". Congreso. Internacional. Wroclaw "(Polonia)". (24/08/2014 - 29/08/2014).

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• VALDUEZA FELIP, Sirona; ."High-quality surface high In-content AlInN grown by RF-Sputtering". Europeo. "Junior European Congress and Exhibition on Advanced Materials and Processes (Euromat 2014)". "(Suiza)". (07/2014 - 07/2014).

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• NÚÑEZ CASCAJERO, Arántzazu; MONTEAGUDO LERMA, Laura; JIMÉNEZ RODRÍGUEZ, Marco; VALDUEZA FELIP, Sirona; MONROY , Eva; RUIZ , Ana; FERNÁNDEZ , Susana; GONZÁLEZ HERRÁEZ, Miguel; NARANJO VEGA, Fernando Bernabé; ."High- quality surface high In-content AlInN grown by RF-Sputtering". Congreso. Internacional. "Junior EUROMAT 2014". Lausana "(Suiza)". (21/07/2014 - 25/07/2014).

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• VALDUEZA FELIP, Sirona; ."Improved conversion efficiency of solar cells based on InGaN/GaN multiple-quantum wells". Europeo. "E-MRS Spring Meeting 2013". "(Francia)". (05/2014 - 05/2014).

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• VALDUEZA FELIP, Sirona; ."Relaxation and In incorporation in high In-content InGaN junctions grown by plasma-assisted MBE for photovoltaic applications". Internacional. "5th Int¿l Symp. on Growth of III-Nitrides (ISGN5)". "(Estados Unidos)". (05/2014 - 05/2014).

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• , M. P. Chauvat; VALDUEZA FELIP, Sirona; MORALES , M.; ."Indium rich InGaN alloys for photovoltaics". Internacional. "Energy Materials Nanotechnology (EMN) Spring Meeting 2014". "(Estados Unidos)". (02/2014 - 02/2014).

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• VALDUEZA FELIP, Sirona; WANG , Y.; ."A TEM investigation of MBE grown InGaN/GaN heterostructures for photovoltaic applications". Internacional. "E-MRS Fall Meeting 2013". "(Polonia)". (10/2013 - 10/2013).

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• VALDUEZA FELIP, Sirona; IBAÑEZ , J.; ARTÚS , L.; ."Morphological and optical properties of InN nanocolumnar films grown by RF sputtering". Europeo. "European Congress and Exhibition on Advanced Materials and Processes (Euromat 2013)". "(España)". (09/2013 - 09/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; IBÁÑEZ , Jordi; GONZÁLEZ HERRÁEZ, Miguel; ARTÚS , Luis; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Morphological and optical properties of nanocolumnar InN films grown by RF sputtering". Congreso. Europeo. "European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2013)". Sevilla (08/09/2013 - 13/09/2013).

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• VALDUEZA FELIP, Sirona; ."Deposition of InN nanocolumns by RF-sputtering using substrate-biased AlN buffer layers". Internacional. "10th International Conference on Nitride Semiconductors (ICNS10)". "(Estados Unidos)". (08/2013 - 08/2013).

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• VALDUEZA FELIP, Sirona; SARZYNSKI , M.; ."High In-content InGaN/GaN junctions grown by plasma-assisted MBE for photovoltaic applications". Internacional. "10th International Conference on Nitride Semiconductors (ICNS10)". "(Estados Unidos)". (08/2013 - 08/2013).

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• VALDUEZA FELIP, Sirona; ."High-efficient optical saturable absorbers at 1.55 µm based on GaN/AlN QW and QD waveguides". Internacional. "10th International Conference on Nitride Semiconductors (ICNS10)". "(Estados Unidos)". (08/2013 - 08/2013).

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• VALDUEZA FELIP, Sirona; TRICHAS , E.; BELLET-AMALRIC , E.; ."III-N quantum cascade structures". Internacional. "10th International Conference on Nitride Seminconductors (ICNS-10)". "(Estados Unidos)". (08/2013 - 08/2013).

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• VALDUEZA FELIP, Sirona; ."InGaN/GaN multiple quantum well solar cells grown by MOVPE with extended spectral response". Internacional. "10th International Conference on Nitride Semiconductors (ICNS10)". "(Estados Unidos)". (08/2013 - 08/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Deposition of InN nanocolumns by RF-sputtering using substrate-biased AlN buffer layers". Congreso. Internacional. "10th International Conference on Nitride Semiconductor (ICNS10)". Washington D.C. "(Estados Unidos)". (25/08/2013 - 30/08/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Highly-efficient optical saturable absorbers at 1.55 µm based on GaN/AlN QW and QD waveguides". Congreso. Internacional. "10th International Conference on Nitride Semiconductors (ICNS10)". Washington D.C. "(Estados Unidos)". (25/08/2013 - 30/08/2013).

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• VALDUEZA FELIP, Sirona; ."Guías de onda de puntos cuánticos de GaN/AlN actuando como absorbentes saturables altamente eficientes a 1.55 µm". Nacional. "VIII Reunión Española de Optoelectrónica (OPTOEL-2013)". "(España)". (07/2013 - 07/2013).

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• VALDUEZA FELIP, Sirona; ."Guías de onda de puntos cuánticos de GaN/AlN actuando como absorbentes saturables altamente eficientes a 1.55 µm". Nacional. "VIII Reunión Española de Optoelectrónica (OPTOEL-2013)". "(España)". (07/2013 - 07/2013).

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• VALDUEZA FELIP, Sirona; ."Innovative proposal towards high-In content InGaN/GaN junctions for photovoltaic applications". Nacional. "VIII Reunión Española de Optoelectrónica (OPTOEL-2013)". "(España)". (07/2013 - 07/2013).

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• VALDUEZA FELIP, Sirona; ."Innovative proposal towards high-In content InGaN/GaN junctions for photovoltaic applications". Nacional. "VIII Reunión Española de Optoelectrónica (OPTOEL-2013)". "(España)". (07/2013 - 07/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Guías de onda de puntos cuánticos de GaN/AlN actuando como absorbentes saturables altamente eficientes a 1.55 µm". Congreso. Nacional. "VIII Reunión Española de Optoelectrónica". Alcalá de Henares (10/07/2013 - 12/07/2013).

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• ROUTOURE , J.-M.; VALDUEZA FELIP, Sirona; MUTTA , G.R.; FAYE , D.N.; GUILLET , B.; MÉCHIN , L.; ."Surface or volume conduction in InN thin films?". Internacional. "International Conference on Noise and Fluctuations (ICNF 2013)". "(Francia)". (06/2013 - 06/2013).

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• ROUTOURE , J.M.; MUTTA , G.R.; FAYE , D.N.; GUILLET , B.; MÉCHIN , L.; MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; MONROY , Eva; RUTERANA , P.; ."Surface or volume conduction in InN thin films?". Conferencia. Internacional. "22nd International Conference on Noise and Fluctuations (ICNF 2013)". Montpellier "(Francia)". (24/06/2013 - 28/06/2013).

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• VALDUEZA FELIP, Sirona; ."Growth and characterization of InGaN/GaN multi-quantum-wells for photovoltaic application". Internacional. "E-MRS Spring Meeting 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ALTAMURA , G.; ."InGaN-based junctions grown by MBE on Si(111) for photovoltaic applications". Internacional. "E-MRS Spring Meeting 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; PEYRADE , D.; ."InGaN-based solar cells: Novel approaches". Internacional. "Photovoltaic Technical Conference ¿ Thin Film & Advanced Silicon Solutions 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ."Morphology control of nanocolumnar InN films through substrate-biased AlN buffer layers deposited by RF-sputtering". Internacional. "E-MRS Spring Meeting 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ."Nonlinear optical waveguides based on GaN/AlN quantum dots for optical switching at 1.55 µm". Internacional. "E-MRS Spring Meeting 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ."Optical and structural characterization of InGaN-based multi-quantum-well structure solar cells". Internacional. "Photovoltaic Technical Conference ¿ Thin Film & Advanced Silicon Solutions 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ."Progress and perspectives of GaN-based intersubband optoelectronics". Internacional. "E-MRS Spring Meeting 2013". "(Francia)". (05/2013 - 05/2013).

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• VALDUEZA FELIP, Sirona; ."InN/InGaN quantum wells synthesized by plasma-assisted molecular-beam epitaxy". Internacional. "SINOPLE Workshop". "(Polonia)". (05/2013 - 05/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; GONZÁLEZ HERRÁEZ, Miguel; MONROY , E.; NARANJO VEGA, Fernando Bernabé; ."Morphology control of nanocolumnar InN films through substratebiased AlN buffer layers deposited by RF-sputtering". Europeo. "European MRS Spring meeting 2013". Strasbourg "(Francia)". (27/05/2013 - 31/05/2013).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; NARANJO VEGA, Fernando Bernabé; CORREDERA , P; RAPENE , L; SARIGIANNIDOU , E; , G. Strasser; MONROY , E.; GONZÁLEZ HERRÁEZ, Miguel; ."Nonlinear optical waveguides based on GaN/AlN quantum dots for optical switching at 1.55 µm". Europeo. "European MRS Spring meeting 2013". Strasbourg "(Francia)". (27/05/2013 - 31/05/2013).

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• BEELER , M.; VALDUEZA FELIP, Sirona; BAHIR , G.; ."III-N heterostructures for infrared optoelectronics: present and perspectives". Europeo. "21st Eur. Workshop on Heterostructure Tech. (HETECH 2012)". "(España)". (11/2012 - 11/2012).

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• VALDUEZA FELIP, Sirona; ."Solar cells based on InGaN/GaN multiple-quantum-well heterostructures". Europeo. "21st Eur. Workshop on Heterostructure Tech. (HETECH 2012)". "(España)". (11/2012 - 11/2012).

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• VALDUEZA FELIP, Sirona; ."Strong nonlinear optical saturation of intraband absorption of GaN/AlN QD-based waveguides at 1.55 ¿m". Europeo. "21st Eur. Workshop on Heterostructure Tech. (HETECH 2012)". "(España)". (11/2012 - 11/2012).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Strong nonlinear optical saturation of intraband absorption of GaN/AlN QD-based waveguides at 1.55 mum". Europeo. "21st European Workshop on Heterostructure Technology (HETECH 2012)". Barcelona (05/11/2012 - 07/11/2012).

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• VALDUEZA FELIP, Sirona; , L. Rapenne; SARIGIANNIDOU , E.; , G. Strasser; ."Design and optical characterization of GaN/AlN quantum-dot waveguides for ultrafast optical switching at 1.55 ¿m". Internacional. "Int¿l Workshop on Nitride Semiconductors 2012 (IWN)". "(Japón)". (10/2012 - 10/2012).

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• VALDUEZA FELIP, Sirona; ."Novel approaches to InGaN-based solar cells". Internacional. "Int¿l Workshop on Nitride Semiconductors 2012 (IWN)". "(Japón)". (10/2012 - 10/2012).

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• VALDUEZA FELIP, Sirona; MONTEAGUDO LERMA, Laura; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Design and optical characterization of GaN/AlN quantum-dot waveguides for ultrafast optical switching at 1.55 mum (aceptado)". Congreso. Internacional. "International Workshop on Nitride Semiconductors 2012 ". Sapporo "(Japón)". (14/10/2012 - 19/10/2012).

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• VALDUEZA FELIP, Sirona; ."Diseño y caracterización óptica de guías de onda basadas en puntos cuánticos de GaN/AlN para conmutación óptica ultrarrápida a 1.5 µm". Nacional. "X Reunión Nacional de Óptica (RNO 2013)". "(España)". (09/2012 - 09/2012).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NÚÑEZ CASCAJERO, Arántzazu; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Diseño y caracterización óptica de guías de onda basadas en puntos cuánticos de GaN/AlN para conmutación óptica ultrarrápida a 1.5 mum". Congreso. Nacional. "X Reunión Nacional de Óptica (XRNO)". Zaragoza (04/09/2012 - 07/09/2012).

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• KOTSAR , Y.; VALDUEZA FELIP, Sirona; DAS , A.; SONGMUANG , R.; SAKR , S.; GROSS , E.; PESACH , A.; ."GaN quantum devices for infrared optoelectronics". Internacional. "4th Int¿l Symp. on Growth of III-Nitrides (ISGN4)". "(Rusia)". (07/2012 - 07/2012).

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• VALDUEZA FELIP, Sirona; GONZÁLEZ-POSADA , F.; PAN , Q.; MARIETTE , H.; ."InGaN-based heterostructures for solar cells". Internacional. "4th Int¿l Symp. on Growth of III-Nitrides (ISGN4)". "(Rusia)". (07/2012 - 07/2012).

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• VALDUEZA FELIP, Sirona; ."Optical saturation of intraband absorption of GaN/AlN quantum-dot waveguides at 1.55 ¿m". Internacional. "4th Int¿l Symp. on Growth of III-Nitrides (ISGN4)". "(Rusia)". (07/2012 - 07/2012).

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• VALDUEZA FELIP, Sirona; ."Study of AlN layers grown on sapphire by RF reactive sputtering by a two-step deposition method". Internacional. "4th Int¿l Symp. on Growth of III-Nitrides (ISGN4)". "(Rusia)". (07/2012 - 07/2012).

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• VALDUEZA FELIP, Sirona; ."Substrate bias effect in AlN buffer layers for InN films deposition by RF reactive sputtering". Internacional. "4th Int¿l Symp. on Growth of III-Nitrides (ISGN4)". "(Rusia)". (07/2012 - 07/2012).

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• VALDUEZA FELIP, Sirona; MONTEAGUDO LERMA, Laura; NARANJO VEGA, Fernando Bernabé; CORREDERA GUILLÉN, Pedro; RAPENNE , L.; SARIGIANNIDOU , E.; , G. Strasser; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; ."Optical saturation of intraband absorption of GaN/AlN quantum-dot waveguides at 1.55 mum". Congreso. Internacional. "4th International Symposium on Growth of III-Nitrides (ISGN4)". Saint Petersburg "(Rusia)". (16/07/2012 - 19/07/2012).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Study of AlN layers grown on sapphire by RF reactive sputtering by a two-step deposition method". Congreso. Internacional. "4th International Symposium on Growth of III-Nitrides (ISGN4)". Saint Petersburg "(Rusia)". (16/07/2012 - 19/07/2012).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; NARANJO VEGA, Fernando Bernabé; ."Substrate bias effect in AlN buffer layers for InN films deposition by RF reactive sputtering". Congreso. Internacional. "4th International Symposium on Growth of III-Nitrides (ISGN4)". Saint Petersburg "(Rusia)". (16/07/2012 - 19/07/2012).

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• VALDUEZA FELIP, Sirona; RIGUTTI , L.; VILALTA-CLEMENTE , A.; LACROIX , B.; ."Temperature-dependent emission of InN/InGaN multiple quantum wells at 1.5 ¿m". Internacional. "Int¿l Conference on Nitride Semi-Conductors (ICNS-9)". "(Reino Unido)". (07/2011 - 07/2011).

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• ESTEBAN , O.; VALDUEZA FELIP, Sirona; DÍAZ-HERRERA , N.; , M. C. Navarrete; , A. González-Cano; ."An environmental-friendly highly-sensitive SPR sensor". Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL-2011)". "(España)". (07/2011 - 07/2011).

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• ESTEBAN , O.; VALDUEZA FELIP, Sirona; DÍAZ-HERRERA , N.; , M. C. Navarrete; , A. González-Cano; ."An environmental-friendly highly-sensitive SPR sensor". Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL-2011)". "(España)". (07/2011 - 07/2011).

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• VALDUEZA FELIP, Sirona; ."Design and optical characterization of GaN/AlN quantum well based waveguides for optical switching at 1.5 ¿m". Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL-2011)". "(España)". (07/2011 - 07/2011).

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• VALDUEZA FELIP, Sirona; ."Design and optical characterization of GaN/AlN quantum well based waveguides for optical switching at 1.5 ¿m". Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL-2011)". "(España)". (07/2011 - 07/2011).

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• VALDUEZA FELIP, Sirona; RIGUTTI , L.; MONTEAGUDO LERMA, Laura; NARANJO VEGA, Fernando Bernabé; VILALTA CLEMENTE, A.; LACROIX , B.; RUTERANA , R.; JULIEN , F.H.; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; ."Temperature-dependent emission of InN/InGaN multiple quantum wells at 1.5 mum". Congreso. Internacional. "9th International Conference on Nitride Semiconductors". Glasgow "(Reino Unido)". (10/07/2011 - 15/07/2011).

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• ESTEBAN MARTINEZ, Óscar; VALDUEZA FELIP, Sirona; DÍAZ HERRERA, N.; NARANJO VEGA, Fernando Bernabé; NAVARRETE , M.; GONZALEZ CANO , A.; ."An environmental-friendly highly-sensitive SPR sensor". Congreso. Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL)". Santander (29/06/2011 - 01/07/2011).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; WIRTHMÜLLER , Alex; MONROY , Eva; VIEGAS , J.; , P. Marques; ."Design and optical characterization of GaN/AlN quantum well based waveguides for optical switching at 1.5 mum". Congreso. Nacional. "VII Reunión Española de Optoelectrónica (OPTOEL'11)". Santander (29/06/2011 - 01/07/2011).

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• VALDUEZA FELIP, Sirona; , M. C. Navarrete; ."Improved performance of SPR optical fiber sensors with InN as dielectric cover". Internacional. "21st Int¿l Conference on Optical Fiber Sensors (OFS-21)". "(Canadá)". (05/2011 - 05/2011).

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• VALDUEZA FELIP, Sirona; DE ABRIL , O.; ."Study of Al:ZnO-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers". Internacional. "E-MRS Spring Meeting 2011". "(Francia)". (05/2011 - 05/2011).

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• VALDUEZA FELIP, Sirona; ."Thermal evolution of the infrared photoluminescence in InN/InGaN multiple-quantum-wells". Internacional. "E-MRS Spring Meeting 2011". "(Francia)". (05/2011 - 05/2011).

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• VALDUEZA FELIP, Sirona; MANGENEY , J.; ."Two-photon absorption of InN films deposited by RF sputtering analyzed by pump-probe measurements at 1.55 ¿m". Internacional. "E-MRS Spring Meeting 2011". "(Francia)". (05/2011 - 05/2011).

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• ESTEBAN MARTINEZ, Óscar; NARANJO VEGA, Fernando Bernabé; DÍAZ HERRERA, N.; VALDUEZA FELIP, Sirona; NAVARRETE , M.; GONZALEZ CANO , A.; ."Improved performance of SPR optical fiber sensors with InN as dielectric cover". Congreso. Internacional. "21st International Conference on Optical Fiber Sensors (OFS-21)". Ottawa "(Canadá)". (15/05/2011 - 19/05/2011).

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• NARANJO VEGA, Fernando Bernabé; FERNÁNDEZ , Susana; DE ABRIL , O.; VALDUEZA FELIP, Sirona; ."Study of Al:ZnO-based transparent contacts deposited at low temperatura by RF-sputtering on InN layers". Congreso. Internacional. "E-MRS Spring Meeting". Niza "(Francia)". (09/05/2011 - 13/05/2011).

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• VALDUEZA FELIP, Sirona; RIGUTTI , L.; NARANJO VEGA, Fernando Bernabé; VILALTA CLEMENTE, A.; LACROIX , B.; RUTERANA , Pierre; JULIEN , F.H.; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; ."Thermal evolution of the infrared photoluminescence in InN/InGaN multiple-quantum-wells". Congreso. Internacional. "E-MRS Spring Meeting". Niza "(Francia)". (09/05/2011 - 13/05/2011).

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• VALDUEZA FELIP, Sirona; MANGENEY , J.; MONROY , Eva; GONZÁLEZ HERRÁEZ, Miguel; JULIEN , F.H.; NARANJO VEGA, Fernando Bernabé; ."Two-photon absorption of InN films deposited by RF sputtering analyzed by pump-probe measurements at 1.5 mum". Congreso. Internacional. "E-MRS Spring Meeting". Niza "(Francia)". (09/05/2011 - 13/05/2011).

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• VALDUEZA FELIP, Sirona; WIRTHMÜLLER , A.; VIEGAS , J.; , P. Marques; ."Design and characterization of nitride-based waveguides for optical switching operating at 1.5 µm". Europeo. "European Optical Society Annual Meeting (EOSAM)". "(Francia)". (10/2010 - 10/2010).

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• MONTEAGUDO LERMA, Laura; VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; WIRTHMÜLLER , A.; MONROY , Eva; , J. Viegas; MARQUES , P.; ."Design and characterization of nitride-based waveguides for optical switching operating at 1.5 µm". Congreso. Europeo. "European Optical Society Annual Meeting 2010 (EOSAM 2010)". París "(Francia)". (26/10/2010 - 29/10/2010).

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• VALDUEZA FELIP, Sirona; ."Low-growth-rate InN buffer layer for the optimization of InN films deposited by RF sputtering on Si(111) and GaN template". Internacional. "Int¿l Workshop on Nitride semiconductors (IWN)". "(Estados Unidos)". (09/2010 - 09/2010).

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• VALDUEZA FELIP, Sirona; OSTERMAIER , C.; ."Optimization of GaN/AlN-based waveguides for all-optical switching at 1.5 µm". Internacional. "Int¿l Workshop on Nitride semiconductors (IWN)". "(Estados Unidos)". (09/2010 - 09/2010).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; ."Low-growth-rate InN buffer layer for the optimization of InN films deposited by RF sputtering on Si(111) and GaN template". Congreso. Internacional. "International Workshop on Nitride semiconductors (IWN 2010)". Tampa (Florida) "(Estados Unidos)". (19/09/2010 - 24/09/2010).

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• VALDUEZA FELIP, Sirona; MONTEAGUDO LERMA, Laura; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; OSTERMAIER , C.; , G. Strasser; , J. Viegas; MARQUES , P.; ."Optimization of GaN/AlN-based waveguides for all-optical switching at 1.5 µm". Congreso. Internacional. "International Workshop on Nitride semiconductors (IWN 2010)". Tampa (Florida) "(Estados Unidos)". (19/09/2010 - 24/09/2010).

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• HOFSTETTER , D.; VALDUEZA FELIP, Sirona; DI FRANCESCO , J.; BAUMANN , E.; GIORGETTA , F. R.; ."Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active". Internacional. "SPIE". "(Estados Unidos)". (08/2010 - 08/2010).

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• VALDUEZA FELIP, Sirona; ."Influence of low-growth-rate InN buffer on InN layers synthesized on Si(111) and GaN templates by reactive RF sputtering". Internacional. "The 3rd Int¿l Symp. on Growth of III-Nitrides (ISGN3)". "(Francia)". (07/2010 - 07/2010).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; MONROY , Eva; ."Influence of low-growth-rate InN buffer on InN layers synthesized on Si(111) and GaN templates by reactive RF sputtering". Congreso. Internacional. "The 3rd International Symposium on Growth of III-Nitrides (ISGN3)". Montpellier "(Francia)". (04/07/2010 - 07/07/2010).

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• VALDUEZA FELIP, Sirona; KEHAGIAS , T.; DIMITRAKOPULOS , G. P.; KOMNINOU , P.; ."Optical performance of semipolar GaN/AlN quantum dots". Internacional. "Int¿l Conference on Nitride Semiconductors (ICNS-8)". "(República de Corea)". (10/2009 - 10/2009).

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• VALDUEZA FELIP, Sirona; LAUFER , A.; EICKHOFF , M.; ."P-type doping of semipolar GaN(11-22) by plasma-assisted molecular-beam epitaxy". Internacional. "Int¿l Conference on Nitride Semiconductors (ICNS-8)". "(República de Corea)". (10/2009 - 10/2009).

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• VALDUEZA FELIP, Sirona; FERNADEZ , S.; ."Morphological, structural and optical properties of high-quality InN on GaN-template films deposited by RF sputtering". Internacional. "E-MRS Fall Meeting 2009". "(Polonia)". (09/2009 - 09/2009).

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• VALDUEZA FELIP, Sirona; CALVO , V.; MARTÍN-LÓPEZ , S.; ."Non-linear absorption measurements of InN/InGaN multiple-quantum-wells structures at 1.5 µm using the Z-Scan method". Internacional. "E-MRS Fall Meeting 2009". "(Polonia)". (09/2009 - 09/2009).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , Lise; MONROY , Eva; FERNÁNDEZ , Susana; ."Morphological, structural and optical properties of high-quality InN on GaN-template films deposited by RF sputtering". Congreso. Internacional. "E-MRS Fall Meeting". Varsovia "(Polonia)". (14/09/2009 - 18/09/2009).

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• NARANJO VEGA, Fernando Bernabé; K. KANDASWAMY, Prem; VALDUEZA FELIP, Sirona; LAHOURCADE , Lise; CALVO , V.; GONZÁLEZ HERRÁEZ, Miguel; MARTÍN LÓPEZ, S.; , P. Corredera; MONROY , Eva; ."Non-linear absorption measurements of InN/InGaN multiple-quantum-wells structures at 1.5 µm using the Z-Scan method". Congreso. Internacional. "E-MRS Fall Meeting". Varsovia "(Polonia)". (14/09/2009 - 18/09/2009).

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• VALDUEZA FELIP, Sirona; ."Optical properties of high-quality InN on GaN-template films deposited by reactive radio-frequency sputtering". Nacional. "VI Reunión Española de Optoelectrónica (OPTOEL-2009)". "(España)". (07/2009 - 07/2009).

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• VALDUEZA FELIP, Sirona; ."Optical properties of high-quality InN on GaN-template films deposited by reactive radio-frequency sputtering". Nacional. "VI Reunión Española de Optoelectrónica (OPTOEL-2009)". "(España)". (07/2009 - 07/2009).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , Lise; MONROY , Eva; ."Optical properties of high-quality InN on GaN-template films deposited by reactive radio-frequency sputtering". Congreso. Internacional. "VI Reunión Española de Optoelectrónica (OPTOEL 2009)". Malaga (15/07/2009 - 17/07/2009).

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• , L. Lahourcade; VALDUEZA FELIP, Sirona; KANDASWAMY , P. K.; ."Doping effects on the growth kinetics of GaN(11-22) deposited by plasma-assisted molecular-beam epitaxy". Internacional. "E-MRS Spring Meeting 2009". "(Francia)". (06/2009 - 06/2009).

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• VALDUEZA FELIP, Sirona; ."Non-linear optical properties of InN/InGaN multiple-quantum-well structures at optical communications wavelengths". Internacional. "E-MRS Spring Meeting 2009". "(Francia)". (06/2009 - 06/2009).

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• VALDUEZA FELIP, Sirona; ."Structural and morphological properties of InN thin films deposited by radio-frequency sputtering on Si(111) and GaN-template substrates". Internacional. "E-MRS Spring Meeting 2009". "(Francia)". (06/2009 - 06/2009).

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• VALDUEZA FELIP, Sirona; ."Study of InN/ZnO: Al heterostructures deposited entirely by RF sputtering at low temperature for optoelectronic applications". Internacional. "E-MRS Spring Meeting 2009". "(Francia)". (06/2009 - 06/2009).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , Lise; WIRTHMÜLLER , Alex; MONROY , Eva; FERNÁNDEZ , Susana; ."Structural and morphological properties of InN thin films deposited by radio frequency sputtering on Si(111) and GaN-template substrates". Congreso. Internacional. "European MRS Spring meeting 2009. Symposium J.". Estrasburgo "(Francia)". (08/06/2009 - 12/06/2009).

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• NARANJO VEGA, Fernando Bernabé; KANDASWAMY , P.K.; VALDUEZA FELIP, Sirona; LAHOURCADE , L.; CALVO , V.; GONZÁLEZ HERRÁEZ, Miguel; MARTÍN-LÓPEZ , S.; CORREDERA , P.; MONROY , E.; ."Non-linear optical properties of InN/InGaN multiple-quantum-well structures at optical communications wavelengths". Europeo. Estrasburgo "(Francia)". (08/06/2009 - 12/06/2009).

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• NARANJO VEGA, Fernando Bernabé; FERNÁNDEZ , S; VALDUEZA FELIP, Sirona; ."Study of InN/ZnO:Al heterostructures deposited entirely by RF sputtering at low temperature for optoelectronic applications". Europeo. "European MRS Spring meeting 2009. Symposium F.". Estrasburgo "(Francia)". (08/06/2009 - 12/06/2009).

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• VALDUEZA FELIP, Sirona; FERNÁNDEZ , S.; ."Influence of deposition conditions on structural properties and surface morphology of InN thin films deposited by reactive radio frequency sputtering". Internacional. "33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE". "(España)". (05/2009 - 05/2009).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; LAHOURCADE , Lise; WIRTHMÜLLER , Alex; MONROY , Eva; FERNÁNDEZ , Susana; ."Influence of deposition conditions on structural properties and surface morphology of InN thin films deposited by reactive radio frequency sputtering". Congreso. Internacional. "The 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009)". Malaga (17/05/2009 - 20/05/2009).

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• VALDUEZA FELIP, Sirona; ."Large third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots for optical switching applications at 1.5 µm". Internacional. "Int¿l Workshop on Nitride Semiconductors (IWN-2008)". "(Suiza)". (10/2008 - 10/2008).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; FERNANDEZ , H.; SOLÍS , J.; GUILLOT , F.; MONROY , Eva; NEVOU , L.; TCHERNYCHEVA , M.; JULIEN , F.H.; ."Large third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots for optical switching applications at 1.5 µm". Congreso. Internacional. "International Workshop on Nitride Semiconductors (IWN 2008)". Montreux "(Suiza)". (06/10/2008 - 10/10/2008).

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• VALDUEZA FELIP, Sirona; ."Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 ¿m". Internacional. "Integrated Photonics and Nanophotonics Research and Applications (IPNRA-2008)". "(Estados Unidos)". (07/2008 - 07/2008).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; FERNANDEZ , H.; SOLÍS , J.; GUILLOT , F.; MONROY , Eva; TCHERNYCHEVA , M.; NEVOU , L.; JULIEN , F.H.; ."Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN/AlN quantum wells and quantum dots at 1.5 µm". Congreso. Internacional. "Integrated Photonics and Nanophotonics Research and Applications (IPNRA 2008) ". Boston "(Estados Unidos)". (13/07/2008 - 16/07/2008).

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• VALDUEZA FELIP, Sirona; GRANDAL , J.; SÁNCHEZ-GARCÍA , M. A.; ."Non-linear properties of nitride-based nanostructures for optically controlling the speed of light". Internacional. "E-MRS Spring Meeting 2008". "(Francia)". (05/2008 - 05/2008).

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• NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; VALDUEZA FELIP, Sirona; FERNANDEZ , H.; SOLÍS , J.; FERNÁNDEZ , Susana; MONROY , Eva; GRANDAL , J.; SÁNCHEZ-GARCÍA , M. A.; ."Non linear properties of Nitride-based nanostructures for optically controlling the speed of light at 1.5 mum". Congreso. Internacional. "E-MRS Spring Meeting". Estrasburgo "(Francia)". (26/05/2008 - 30/05/2008).

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• VALDUEZA FELIP, Sirona; NARANJO , F. B.; FERNANDEZ , H.; SOLÍS , J.; GUILLOT , F.; NEVOU , L.; JULIEN , F.H.; ."Characterization of Si-doped GaN/AlN quantum wells and quantum dots for optical switching applications at 1.5 ¿m". Nacional. "Conferencia Española de Nanofotónica (CEN-2008)". "(España)". (04/2008 - 04/2008).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; FERNANDEZ , H.; SOLÍS , J.; GUILLOT , F.; MONROY , Eva; NEVOU , L.; TCHERNYCHEVA , M.; JULIEN , F.H.; ."Characterization of Si-doped GaN/AlN quantum wells and quantum dots for optical switching applications at 1.5 µm". Congreso. Nacional. "Conferencia Española de Nanofotónica (CEN 2008)". Tarragona (02/04/2008 - 04/04/2008).

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• VALDUEZA FELIP, Sirona; ."Novel nitride-based materials for nonlinear optical signal processing applications at 1.5 ¿m". Internacional. "IEEE Int¿l Symp. on Intelligent Signal Processing (WISP-2007)". "(España)". (10/2007 - 10/2007).

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• VALDUEZA FELIP, Sirona; NARANJO VEGA, Fernando Bernabé; GONZÁLEZ HERRÁEZ, Miguel; FERNANDEZ , H.; SOLÍS , J.; FERNÁNDEZ , Susana; GUILLOT , F.; MONROY , Eva; GRANDAL , J.; SÁNCHEZ-GARCÍA , M. A.; ."Novel nitride-based materials for nonlinear optical signal processing applications at 1.5 mum". Conferencia. Internacional. "IEEE International Symposium on Intelligent Signal Processing (WISP 2007)". Alcalá de Henares (03/10/2007 - 05/10/2007).

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• MORENO , I.; VALDUEZA FELIP, Sirona; MATEOS , F.; SÁNCHEZ-LÓPEZ , M. M.; VELÁSQUEZ , P.; MARTÍNEZ , A.; MARTINEZ , J.L.; BEAUDOIN , N.; ."Moduladores de cristal líquido nemático y ferroeléctrico: técnicas de calibración y aplicación al control del estado de polarización de la luz". Nacional. "VIII Reunión Nacional de Óptica". "(España)". (09/2006 - 09/2006).

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Tesis

• BLASCO CHICANO, Rodrigo; "Development of solar cells based in AlInN/Si heterojunctions grown by RF-sputtering". Director: VALDUEZA FELIP, Sirona, NARANJO VEGA, Fernando Bernabé, . UNIVERSIDAD DE ALCALA. Fecha de lectura: 16/07/2020. Sobresaliente Cum Laude.

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• VALDUEZA FELIP, Sirona; "Nitride-based semiconductor nanostructures for applications in optical communications at 1.5 mum". Director: GONZÁLEZ HERRÁEZ, Miguel, NARANJO VEGA, Fernando Bernabé, . Mención Europea . UNIVERSIDAD DE ALCALA. Fecha de lectura: 07/2011. Sobresaliente cum Laude.

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• VALDUEZA FELIP, Sirona; "Nitride-based semiconductor nanostructures for applications in optical communications at 1.5 µm". Director: NARANJO VEGA, Fernando Bernabé, GONZÁLEZ HERRÁEZ, Miguel, . Departamento de Electrónica. Fecha de lectura: 28/07/2011. Sobresaliente Cum Laude.

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